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2N3961 - NPN silicon RF Power transistors

Download the 2N3961 datasheet PDF. This datasheet also covers the 2N3375 variant, as both devices belong to the same npn silicon rf power transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N3375-Motorola.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N3960 HIGH FREQUENCY TRANSISTOR
2N3962 AMPLIFIER TRANSISTOR
2N3963 AMPLIFIER TRANSISTOR
2N3964 AMPLIFIER TRANSISTOR
2N3965 AMPLIFIER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N3375(SILlCON) 2N3553 2N3632 2N 3961 •CASE 79 (10·39) 2N3553 ·'·CASE 24 (10·102) 2N3961 * Collector Connected "·CASE 36 (10·60) to Case .. Collector electrically connected to case; stud electrically 2N3375 isolated from case 2N3632 *•• Stud electrically Isolated from case NPN silicon RF Power transistors, optimized for large-signal power amplifier and driver applications to 400MHz, provide wide choice of power levels and guaranteed safe operating areas. MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage VCEO Collector-Base Voltage VCB Emitter-Base Voltage VEB Collector Current IC Total Device Dissipation @ TC =25·C PD Derate above 25·C Operating and Storage Junction Temperature Range TJ , Tstg 2N3375 2N3553 2N3632 2N3961 .. 40 • .. .. 65 .. .. 4.
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