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2N3635 - HIGH VOLTAGE TRANSISTOR

Download the 2N3635 datasheet PDF. This datasheet also covers the 2N3634 variant, as both devices belong to the same high voltage transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N3634-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage — Collector Current Continuous @ Total Device Dissipation T/ = 25°C Derate above 25°C @ Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 2N3634 2N3636 Symbol 2N3635 2N3637 VCEO VCBO VEBO 'C PD 140 175 140 175 5.0 1.0 1.0 5.71 Pd TJ- Tstg 5.0 28.6 -65 to +200 Unit Vdc Vdc Vdc Adc Watt mW/°C Watts mW/°C °C 2N3634 thru 2N3637 JAN, JTX AVAILABLE CASE 79, STYLE 1 TO-39 (TO-39-205AD) HIGH VOLTAGE TRANSISTOR PNP SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
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