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2N3616 - PNP germanium power transistors

Download the 2N3616 datasheet PDF. This datasheet also covers the 2N3615 variant, as both devices belong to the same pnp germanium power transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N3615-Motorola.pdf) that lists specifications for multiple related part numbers.

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2N3615 thru 2N3618 (GERMANIUM) PNP germanium power transistors for switching and amplifier applications. CASE 11 (TO-3) CASE 4-04 (TO-41) For units with solder lugs attached, specify devices MP3615 etc. (TO-41 package) MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage (Open Base) Symbol VCES VCEO 2N3615 2N3617 60 50 2N3616 2N3618 75 60 Collector-Base Voltage VCB Emitter-Base Voltage VEB Collector Current (Continuous) IC Peak Collector Current IC (PW ~ 5 msec) 80 100 40 50 7.0 15 Base Current (Continuous) storage Temperature Operating Case Temperature Total Device Dissipation @TC = 250 C Derate above 250 C IB Tstg TC PD 2.0 -65 to+ 110 -65 to+ll0 77 1.0 Thermal Resistance, Junction to Case ()JC 1.
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