2N3297 Datasheet (Motorola) - NPN silicon annular transistor

2N3297, NPN silicon annular transistor

3297 2N (SILICON) NPN silicon annular transistor for linear amplifier applications for 2 to 100 MHz.

CASE 1 (TO 3) Collector connected to case MAXIMUM RATINGS.

Rating Collector-Base Voltage Collector- Emitter Voltage Emitter-Base Voltage Collector Current (Continuous) Base-Current (Continuous) Power Input (PEP) Power Output (PEP) Total Device Dissipation @ 25°C Case Temperature Derating Factor above 25°C Junction Temperature Storage Temperature Range Symbol VCB VCES VEB IC ls Pin Pout P