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2N2957 - PNP Transistor

Download the 2N2957 datasheet PDF. This datasheet also covers the 2N2955 variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N2955-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2N2951 Small Signal Transistors Central
2N2952 Small Signal Transistors Central Semiconductor
2N2955 SILICON PNP TRANSISTOR Unisonic Technologies
2N2955 PNP EPITAXIAL PLANAR TRANSISTOR Dc Components
2N2955 PNP Transistor INCHANGE

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N2950 NPN Transistor
2N2951 NPN Transistor
2N2952 NPN Transistor
2N2955 PNP Transistor
2N2956 PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N2955 (GERMANIUM) 2N2956 2N2957 CASE12(~ (TO.18)Z Collector connected to case PNP germanium epitaxial mesa transistors for highspeed switching applications. MAXI MUM RATI NGS (TA = 250C unless otherwise noted) Rating Collector-Base Voltage Emitter-Base Voltage 2N2955 Collector-Emitter Voltage 2N2956 2N2957 Collector Current Junction Temperature Storage Temperature Total Device Dissipation at 25°C Case Temperature (Derate 4 mW/oC above 25°C) Total Device Dissipation at 25°C Ambient Temperature (Derate 2 mW/oC above 25°C) Symbol VCS VES VCEO Ie TJ Tstg PD PD Value 40 3.5 25 20 18 100 100 -65 to +100 300 150 Unit Vdc Vdc Vdc mAdc °c °c mW mW ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Collector-Base Breakdown Voltage (Ie = 100 j.
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