2N2912 Datasheet (Motorola) - high-frequency power transistor

2N2912, high-frequency power transistor

2N2912 (GERMANIUM) CASE 8 PNP high-speed, high-frequency power transistor especially designed for switching and power converter circuits operating from low-voltage power sources such as solar cells, thermo-electric generators, sea cells, fuel cells and 1.

5 volt batteries.

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Total Device Dissipation @ TC = 35°C Derate above 35°C Symbol vCEO VCB VEB