2N2405 Datasheet (Motorola) - NPN silicon annular transistors

2N2405, NPN silicon annular transistors

1893 2N (SILICON) 2N240S NPN silicon annular transistors designed for mediumpower amplifier and switching applications.

CASE 31 (TO-5) Collector connected to case MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25"C Derate above 25"C Total Device Dissipation @ TC - 25"C Derate above 25"C Operating and Storage Junction Temperature Range Symbol VCEO VCER VCS VES IC PD PD T