2N1983 Datasheet (Motorola) - NPN silicon annular small-signal transistor

2N1983, NPN silicon annular small-signal transistor

1983 2N (SILICON) 2N1984 NPN silicon annular small-signal transistor.

CASE 31 (TO 5) Collector connected to cas.

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @TA = 25° C Derate above 25°C Total Device Dissipation@ TC = 25°C Derate above 25° C Operating and Storage Junction Temperature Range Symbol Value Unit VCEO 25 Vdc VCB 50 Vdc VEB 5.0 Vdc IC 1.0 Adc PD 0.6 Watt 4.8 mW/oC PD