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2N1959 - NPN Transistor

2N1959 Description

2N1959 (SILICON) CASE 31 (TO *S) NPN silicon annular transistor designed for highspeed, medium-power saturated switching applications.Collector.

2N1959 Applications

* Collector connected to case MAXIMUM RATINGS Rating Collector-Emitter Voltage RBE = 10 ohms Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Ran

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Datasheet Details

Part number
2N1959
Manufacturer
Motorola
File Size
87.56 KB
Datasheet
2N1959-Motorola.pdf
Description
NPN Transistor

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NPN Transistor Motorola
Motorola 2N1959-like datasheet