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1N2383 - high-voltage silicon rectifier

Download the 1N2383 datasheet PDF. This datasheet also covers the 1N2382 variant, as both devices belong to the same high-voltage silicon rectifier family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (1N2382-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
1N23A SILICON MIXER DIODE ASI
1N23E DIODE DSI
1N23WE SILICON MIXER DIODE Advanced Semiconductor
1N23WE DIODE DSI
1N23WG SILICON MIXER DIODE Advanced Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
1N2382 high-voltage silicon rectifier
1N2384 high-voltage silicon rectifier
1N2385 high-voltage silicon rectifier
1N2163 TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES
1N2163A TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HIGH VOLTAGE SILICON RECTIFIERS MOLDED ASSEMBLIES lN1730 thru lN1734 lN2382 thru lN2385 CASE 41 Standard single - phase, half-wave, high -voltage silicon rectifier assemblies. MAXIMUM RATINGS (!overing all devices. in the table below) Max. DC Reverse Current @ Rated Peak Reverse Voltage 25°C 100°C Max. Surge Current (8 ms) Operating Temperature 10pA 100pA 2.5A _55°C to +150"C ELECTRICAL CHARACTERISTICS Rectifier Types VRM (rep) Avg. Rectified Fwd. Current.., mA Max.RMS Input @25°C @100'C Voltage Max. DC Fwd. Voltage @ 100mA @ 25°C Case Dimensions L Dia.
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