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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC817–16LT1/D
General Purpose Transistors
NPN Silicon
2 BASE 1 EMITTER Symbol VCEO VCBO VEBO IC Value 45 50 5.0 500 Unit V V V mAdc COLLECTOR 3
BC817-16LT1 BC817-25LT1 BC817-40LT1
3 1 2
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous
CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.
BC817-25LT1 Datasheet
