epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.
Low Forward Voltage.
Low Switching noise.
High Current Capacity.
Guarantee Reverse Avalanche.
Guard-Ring for Stress Protection.
Low Power Loss & High efficiency.
125 Operating Junction Temperature.
Low Stored Charge Majority Carrier Conduction.
Plastic Material.
📁 SRAF08100 Similar Datasheet
SRAF08200 - Full Plastic Schottky Barrier Rectifiers(Mospec)
SRAF08100_MospecSemiconductor.pdf
