MGFC44V3642 - C band internally matched power GaAs FET

Product Overview

Mitsubishi

Part number	MGFC44V3642
Manufacturer	Mitsubishi
File Size	120.51 KB
Description	C band internally matched power GaAs FET
Datasheet	MGFC44V3642 Datasheet
Additional preview pages of the MGFC44V3642 datasheet.

The MGFC44V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3.6 4.2 GHz band amplifiers.

Class A operation Internally matched to 50(ohm) system.
High output power P1dB=24W (TYP. ) @f=3.6.
4.2GHz.
High power gain GLP=11.0dB (TYP. ) @f=3.6.
4.2GHz.
High power added efficiency P. A. E. =35% (TYP. ) @f=3.6.
4.2GHz.
Low distortion [item -51] IM3=-42dBc (TYP. ) @Po=33.5dBm S. C. L 2MIN 17.4 +/- 0.2 8.0 +/- 0.2 2MIN.

📁 Similar Datasheet

MGFC40V3742 - C band internally matched power GaAs FET (Mitsubishi Electric)
MGFC40V4450 - C band internally matched power GaAs FET (Mitsubishi Electric)
MGFC40V5964 - C band internally matched power GaAs FET (Mitsubishi Electric)
MGFC41V6472 - C band internally matched power GaAs FET (Mitsubishi Electric)
MGFC41V7177 - C band internally matched power GaAs FET (Mitsubishi Electric)
MGFC42V5867 - 16W INTERNALLHY MATCHED GaAs FET (Mitsubishi Electric)
MGFC42V5964A - C band internally matched power GaAs FET (Mitsubishi Electric)
MGFC42V6472A - C band internally matched power GaAs FET (Mitsubishi Electric)

Other Datasheets by Mitsubishi

Published: Apr 29, 2005 |