MGF1801B Datasheet (Mitsubishi) - MICROWAVE POWER GaAs FET

MGF1801B, MICROWAVE POWER GaAs FET

The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators.

The hermetically sealed metalceramic for microstrip circuits.

package assures minimum parasitic losses, and has a configuration suitable OUTLINE DRAWING 4MIN.

1 Unit:

MGF1801B Features

* High output power at 1dB gain compression P1dB=23dBm(TYP.)

* High linear power gain GLP=9dB(TYP.)

* High reliability and stability @f=8GHz 0.5±0.15 3 @f=8GHz 2 2 APPLICATION S to X band medium-power amplifiers and oscillators. 2.5±0.2 QUALITY GRADE

* IG RECOM