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M5M5V108CVP-70XI - 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

General Description

The M5M5V108CFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology.

Key Features

  • Type name M5M5V108CFP,VP,RV,KV,KR-70HI Access time (max) Power supply current DATA INPUTS/.

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Other Datasheets by Mitsubishi Electric

Part Number Description
M5M5V108CVP-70X 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M5V108CVP-70H 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M5V108CVP-70HI 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M5V108CVP-10H 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M5V108CVP-10HI 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

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MITSUBISHI LSIs M5M5V108CFP,VP,RV,KV,KR -70HI, -10HI, -70XI, -10XI 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M5V108CFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power static RAM. They are low standby current and low operation current and ideal for the battery back-up application. The M5M5V108CVP,RV,KV,KR are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD). Two types of devices are available.