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M5M5256KP-70XL-W - 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

Description

The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology.

The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM.

Features

  • LL-W, -45XL-W,-55XL-W,-70XL-W 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM POWER DOWN.

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Other Datasheets by Mitsubishi Electric

Part Number Description
M5M5256KP-70XL-I 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
M5M5256KP-70LL-I 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
M5M5256KP-70LL-W 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
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M5M5256KP-45LL-W 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

Full PDF Text Transcription (Reference)

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'97.4.7 MITSUBISHI LSIs M5M5256DP,KP,FP,VP,RV -45LL-W,-55LL-W,-70LL-W, -45XL-W,-55XL-W,-70XL-W 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memory systems which require simple interface. Especially the M5M5256DVP,RV are packaged in a 28-pin thin small outline package.Two types of devices are available, M5M5256DVP(normal lead bend type package), M5M5256DRV(reverse lead bend type package).
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