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M5M5256DRV-85VXL-W - 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

Description

The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology.

The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM.

Features

  • ther inputs=0~Vcc (Note 7) 10 2 uA 0.05 (Note 8) Note7: ICC (PD) = 1uA in case of Ta = 25°C Note8: ICC (PD) = 0.2uA in case of Ta = 25°C (2) TIMING.

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Full PDF Text Transcription (Reference)

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'97.4.7 MITSUBISHI LSIs M5M5256DFP,VP,RV -70VLL-W,-85VLL-W, -70VXL-W,-85VXL-W 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memory systems which require simple interface. Especially the M5M5256DVP,RV are packaged in a 28-pin thin small outline package.Two types of devices are available, M5M5256DVP(normal lead bend type package), M5M5256DRV(reverse lead bend type package).
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