Datasheet4U Logo Datasheet4U.com

M5M5255FP-55LL - 262 /144-BIT (32 /768-WORD BY 8-BIT) CMOS STATIC RAM

Description

The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology.

The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM.

Features

  • 2.2V /S1 /S1≥Vcc-0.2V S2 control mode Vcc S2 0.2V S2≤0.2V tsu (PD) 4.5V 4.5V trec (PD) 0.2V.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
M5M5256BP 256K-Bit CMOS Sraric RAM Mitsubishi Electric
M5M5256DKP 262144-Bit CMOS Static RAM Mitsubishi Electric
M5M5256DKP-70LL 262144-Bit CMOS Static RAM Mitsubishi Electric
M5M5256DKP-70LL-W 262144-Bit CMOS Static RAM Mitsubishi Electric
M5M5256DKP-xxxx-W 262144-Bit CMOS Static RAM Mitsubishi Electric

Other Datasheets by Mitsubishi Electric

Part Number Description
M5M5255FP-55XL 262 /144-BIT (32 /768-WORD BY 8-BIT) CMOS STATIC RAM
M5M5255FP-10 CMOS STATIC RAM
M5M5255FP-10L CMOS STATIC RAM
M5M5255FP-10LL CMOS STATIC RAM
M5M5255FP-12 CMOS STATIC RAM

Full PDF Text Transcription

Click to expand full text
'97.4.7 MITSUBISHI LSIs M5M5255DP,FP -45LL,-55LL,-70LL, -45XL,-55XL,-70XL 262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memory systems which require simple interface.
Published: |