Datasheet4U Logo Datasheet4U.com

M5M51016BRT-12VL-I - 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

Description

The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology.

The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM.

Features

  • Power supply current Type name Access time (max) Active (max) stand-by (max) 120µA (VCC = 3.6V) M5M51016BTP,RT-12VL 120ns 12mA (1MHz) M5M51016BTP,RT-12VLL 120ns 24µA (VCC = 3.6V) 0.3µA (VCC = 3.0V, typ) Single +3.0V power supply Low stand-by current 0.3É A (typ. ) Directly TTL compatible : All inputs and outputs Easy memory expansion and power down by CS, BC1 & BC2 Data hold on +2V power supply Three-state outputs : OR-tie capability OE prevents data contention in the I/O bus Common data.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
M5M51008FP CMOS Static RAM Mitsubishi Electric
M5M51008P 1M-Bit CMOS Static RAM Mitsubishi Electric
M5M5117FP 16K-Bit CMOS Static RAM Mitsubishi Electric
M5M5256BP 256K-Bit CMOS Sraric RAM Mitsubishi Electric
M5M5256DKP 262144-Bit CMOS Static RAM Mitsubishi Electric

Other Datasheets by Mitsubishi Electric

Part Number Description
M5M51016BRT-12VL-I 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
M5M51016BRT-12VL 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
M5M51016BRT-12VLL 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
M5M51016BRT-12VLL-I 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
M5M51016BRT-12VLL-I 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

Full PDF Text Transcription

Click to expand full text
9 9 Jul Jul,1997 ,1997 M5M51016BTP,RT-12VL-I, M5M51016BTP,RT-12VL-I, -12VLL-I -12VLL-I 1048576-BIT(65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT)CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are low stand-by current and low operation current and ideal for the battery back-up application. The M5M51016BTP,RT are packaged in a 44-pin thin small outline package which is a high reliability and high density surface mount device (SMD). Two types of devices are available.
Published: |