Datasheet4U Logo Datasheet4U.com

M5M51008DRV-55H - 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

Download the M5M51008DRV-55H datasheet PDF. This datasheet also covers the M5M variant, as both devices belong to the same 1048576-bit(131072-word by 8-bit)cmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology.

Features

  • Type name M5M51008DFP,VP,RV,KV-55H M5M51008DFP,VP,RV,KV-70H Access time (max) Power supply current Active (1MHz) (max) stand-by (max) DATA INPUTS/.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M5M-51008D.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

Click to expand full text
Ver. 1.1 MITSUBISHI LSIs M5M51008DFP,VP,RV,KV,KR -55H, -70H 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power static RAM. They are low standby current and low operation current and ideal for the battery back-up application. The M5M51008DVP,RV,KV are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD). Two types of devices are available.
Published: |