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M5M51008BFP - 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

Download the M5M51008BFP datasheet PDF. This datasheet also covers the M5M variant, as both devices belong to the same 1048576-bit(131072-word by 8-bit)cmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology.

The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM.

Features

  • Type name M5M51008BFP,VP,RV,KV,KR-70VL M5M51008BFP,VP,RV,KV,KR-10VL M5M51008BFP,VP,RV,KV,KR-12VL M5M51008BFP,VP,RV,KV,KR-15VL M5M51008BFP,VP,RV,KV,KR-70VLL M5M51008BFP,VP,RV,KV,KR-10VLL M5M51008BFP,VP,RV,KV,KR-12VLL M5M51008BFP,VP,RV,KV,KR-15VLL Access time (max) Power supply current VCC Active stand-by (1MHz) (max) (max) DATA INPUTS/.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M5M-51008.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Mitsubishi Electric

Part Number Description
M5M51008BFP-10VL 1M-Bit CMOS Static RAM
M5M51008BFP-10VLL 1M-Bit CMOS Static RAM
M5M51008BFP-12VL 1M-Bit CMOS Static RAM
M5M51008BFP-12VLL 1M-Bit CMOS Static RAM
M5M51008BFP-15VL 1M-Bit CMOS Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1997-1/21 MITSUBISHI LSIs M5M51008BFP,VP,RV,KV,KR -70VL,-10VL,-12VL,-15VL, -70VLL,-10VLL,-12VLL,-15VLL 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are low standby current and low operation current and ideal for the battery back-up application. The M5M51008BVP,RV,KV,KR are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD).Two types of devices are available.
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