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M5M29FT800VP-12 - 8M-Bit BLOCK ERASE FLASH MEMORY

Download the M5M29FT800VP-12 datasheet PDF. This datasheet also covers the M5M29FT800FP variant, as both devices belong to the same 8m-bit block erase flash memory family and are provided as variant models within a single manufacturer datasheet.

Description

mobile and personal computing, and communication products.

Features

  • Organization 524,288 word x 16bit 1,048,576 word x 8 bit Supply voltage VCC = 3.3V±0.3V Access time 80/100/120ns (Max) PIN.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M5M29FT800FP_MitsubishiElectricSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Mitsubishi Electric

Part Number Description
M5M29FT800VP-10 8M-Bit BLOCK ERASE FLASH MEMORY
M5M29FT800VP-80 8M-Bit BLOCK ERASE FLASH MEMORY
M5M29FT800VP 8M-Bit BLOCK ERASE FLASH MEMORY
M5M29FT800FP 8M-Bit BLOCK ERASE FLASH MEMORY
M5M29FT800FP-10 8M-Bit BLOCK ERASE FLASH MEMORY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MITMSIUTSBUISBHISI HLISILsSIs M5M29FBM/T58M0290FFBP/T,8V00PF,PR,VVP-,8R0V-,8-01,0-1,0-,1-122 8,388,388,680,680-B8-IBT I(T10(14084,587,567-W6-OWRODRDBYB8Y-B8-IBT I/T5/2542,248,288-W8-OWRODRDBYB1Y61-B6-IBT)IT) CMCOMSO3S.33V.3-OVN-OLNYL, YB, LBOLCOKCEKREARSAESFELFALSAHSMHEMMEOMROYRY DESCRIPTION The MITSUBISHI M5M29FB/T800FP, VP, RV are 3.3V-only high speed 8,388,608-bit CMOS boot block Flash Memories suitable for mobile and personal computing, and communication products. The M5M29FB/T800FP, VP, RV are fabricated by CMOS technology for the peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 44pin SOP or 48pin TSOP(I). FEATURES Organization ................................. 524,288 word x 16bit .................................
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