RD05MMP1 Silicon RF Power MOS FET

Mitsubishi Electric

Description

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD05MMP1 (a) 0.2+/-0.05 0.65+/-0.2 (c) (b) 7.0+/-0.2 (b) 8.0+.
RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications. H.

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Datasheet Specifications

Part number: RD05MMP1
Manufacturer: Mitsubishi Electric
File Size: 771.23 KB
Datasheet: RD05MMP1_MitsubishiElectric.pdf
Description: Silicon RF Power MOS FET

Features

* High power gain: Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz
* High Efficiency: 43%min. (941MHz)
* No gate protection diode INDEX MARK [Gate] (4.5) 0.95+/-0.2 2.6+/-0.2 TOP VIEW DETAIL A SIDE VIEW 1.8+/-0.1 BOTTOM VIEW Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [in

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RD05MMP1 Silicon Power MOS FET Mitsubishi Electric

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