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ML101J27 - LASER DIODES

Description

ML1XX27 is semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 658nm and standard pulse light output of 350mW.

Features

  • a high-power, high-efficient AlGaInP.
  • High Output Power: 350mW (Pulse).
  • High Efficiency: 0.95W/A (typ. ).
  • Visible Light: 660nm (typ. ).
  • Low Aspect Ratio (θ⊥ / θ// ): 1.7 (typ. ).
  • Low Astigmatic Distance: 1 µm (typ. ) This type is under development. Therefore, please note that this data sheet may be changed without any notice.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MITSUBISHI LASER DIODES ML1XX27 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML101J27 FEATURES a high-power, high-efficient AlGaInP •High Output Power: 350mW (Pulse) • High Efficiency: 0.95W/A (typ.) • Visible Light: 660nm (typ.) • Low Aspect Ratio (θ⊥ / θ// ): 1.7 (typ.) • Low Astigmatic Distance: 1 µm (typ.) This type is under development. Therefore, please note that this data sheet may be changed without any notice. DESCRIPTION ML1XX27 is semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 658nm and standard pulse light output of 350mW. ML1XX27 has a real-index-waveguide which improves the slope efficiency (reduction of the operating current) and the astigmatic distance.
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