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MGF4961B - SUPER LOW NOISE InGaAs HEMT

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Mitsubishi Electric

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MGF4961B SUPER LOW NOISE InGaAs HEMT by Mitsubishi Electric - Datasheet Preview — Datasheet preview – MGF4961B

Datasheet Details

Part number	MGF4961B
Manufacturer	Mitsubishi Electric
File Size	137.32 KB
Description	SUPER LOW NOISE InGaAs HEMT
Datasheet	MGF4961B Datasheet
Additional preview pages of the MGF4961B datasheet.

Product details

Description

The MGF4961B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.

Features

Low noise figure @ f=20GHz NFmin. = 0.7dB (Typ. ) High associated gain @ f=20GHz Gs = 13.5dB (Typ. ) (1.05) ① C to K band low noise amplifiers 0.5±0.1 ③ 1.19±0.2 0.125 ±0.05.

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Published: Jul 4, 2007 |