MGF4961B - SUPER LOW NOISE InGaAs HEMT

Mitsubishi Electric

Description

The MGF4961B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.

Features

Low noise figure @ f=20GHz NFmin. = 0.7dB (Typ. ) High associated gain @ f=20GHz Gs = 13.5dB (Typ. ) (1.05) ① C to K band low noise amplifiers 0.5±0.1 ③ 1.19±0.2 0.125 ±0.05.

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MGF4961B super low noise ingaas hemt by Mitsubishi Electric - Datasheet Preview

Datasheet Details

Part number	MGF4961B
Manufacturer	Mitsubishi Electric
File Size	137.32 KB
Description	SUPER LOW NOISE InGaAs HEMT
Datasheet	MGF4961B Datasheet

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MITSUBISHI SEMICONDUTOR Feb./2007 MGF4961B SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF4961B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. Outline Drawing 4.0±0.2 (1.05) 1.9±0.1 (1.05) (unit: mm) FEATURES Low noise figure @ f=20GHz NFmin. = 0.7dB (Typ.) High associated gain @ f=20GHz Gs = 13.5dB (Typ.) (1.05) ① C to K band low noise amplifiers 0.5±0.1 ③ 1.19±0.2 0.125 ±0.05 QUALITY GRADE GG GD-31 (1.05) APPLICATION 1.02±0.1 ② ② 1.9±0.1 RECOMMENDED BIAS CONDITIONS VDS=2V , ID=10mA MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric ORDERING INFORMATION Tape & reel www.DataSheet4U.com 4000pcs.