Datasheet4U Logo Datasheet4U.com

MGF1954A - Microwave Power MES FET

General Description

The MGF1954A is designed for use in S to Ku band power amplifiers.

The lead-less ceramic package assures minimum parasitic losses.

Key Features

  • High gain and High P1dB Glp=5.0dB , P1dB=23dBm (Typ. ) @ f=12GHz.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MGF1951A Medium Power Microwave MESFET Mitsubishi
MGF1902B TAPE CARRIER LOW NOISE GaAs FET Mitsubishi
MGF1903B TAPE CARRIER LOW NOISE GaAs FET Mitsubishi
MGF1923 TAPE CARRIER SMALL SIGNAL GaAs FET Mitsubishi
MGF1941AL Micro-X type plastic package Mitsubishi Electric Semiconductor

Other Datasheets by Mitsubishi Electric

Part Number Description
MGF1952A Microwave Power MES FET
MGF1953A Microwave Power MES FET
MGF1304A for Microwave Low-Noise Amplifiers N-Channel Schottky Barrier Gate Type
MGF1305 Microwave Low Noise Amplifier
MGF1451A Low Noise MES FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Aug. /2004 MITSUBISHI SEMICONDUCTOR MGF1954A Microwave Power MES FET (Leadless Ceramic Package) DESCRIPTION The MGF1954A is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES High gain and High P1dB Glp=5.0dB , P1dB=23dBm (Typ.) @ f=12GHz APPLICATION S to Ku band power Amplifiers Fig.1 QUALITY GRADE GG RECOMMENDED BIAS CONDITION VDS=6V, ID=100mA ORDERING INFORMATION Tape & reel 3000pcs./reel Keep Safety first in your circuit designs! www.DataSheet4U.