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M63817P - (M63817xx) 8-UNIT 300mA TRANSISTOR ARRAY

General Description

M63817P/FP/KP are eight-circuit Single transistor arrays with clamping diodes.

The circuits are made of NPN transistors.

Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

Key Features

  • Three package configurations (P, FP, and KP) q Medium breakdown voltage (BVCEO ≥ 35V) q Synchronizing current (IC(max) = 300mA) q With clamping diodes q Low output saturation voltage q Wide operating temperature range (Ta =.
  • 40 to +85 °C) q IN7→ IN8→ GND 7 8 9 →COM COMMOM Package type 18P4G(P) NC 1 20 NC IN1→ 2 IN2→ 3 19 →O1 18 →O2 17 →O3 16 →O4 15 →O5 14 →O6 13 →O7 12 →O8 11 →COM.

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www.DataSheet4U.com P . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL RY A N I MITSUBISHI SEMICONDUCTOR M63817P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE PIN CONFIGURATION IN1→ IN2→ IN3→ INPUT 1 2 3 18 →O1 17 →O2 16 →O3 15 →O4 14 →O5 13 →O6 12 →O7 11 →O8 10 DESCRIPTION M63817P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.