RD100HHF1 MOS FET

Mitsubishi Electric Semiconductor

Description

www.DataSheet.co.kr MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 25.0+/-0.3 7.0+/-0.5 11.0+/-0..
RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. Hi.

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Datasheet Specifications

Part number: RD100HHF1
Manufacturer: Mitsubishi Electric Semiconductor
File Size: 239.92 KB
Datasheet: RD100HHF1_MitsubishiElectricSemiconductor.pdf
Description: MOS FET

Applications

* OUTLINE DRAWING 4-C2 24.0+/-0.6
* High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz

RD100HHF1 Distributors

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RD100HHF1 MOS FET Mitsubishi Electric Semiconductor

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