RA80H1415M1 - Silicon RF Power Modules

Mitsubishi Electric Semiconductor

RA80H1415M1 Description

< Silicon RF Power Modules > RA80H1415M1 RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V, 2 Stage Amp.For MOBILE RADIO .
The RA80H1415M1 is a 80-watt RF MOSFET Amplifier Module for 12.

RA80H1415M1 Features

* Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)
* Pout>80W, T>50% @f=144-148MHz, Pout>60W, T>50% @ f=136-174MHz, VDD=12.5V, VGG=5V, Pin=50mW
* Broadband Frequency Range: 136-174MHz
* Low-Power Control Current IGG=1mA (typ) at VGG=5V
* Modul

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Datasheet Details

Part number: RA80H1415M1
Manufacturer: Mitsubishi Electric Semiconductor
File Size: 303.70 KB
Datasheet: RA80H1415M1-MitsubishiElectricSemiconductor.pdf
Description: Silicon RF Power Modules

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Silicon Power Modules Mitsubishi Electric Semiconductor

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