RA20H8087M 806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO

Mitsubishi Electric Semiconductor

Description

MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M BLOCK DIAGRAM 806-825/ 851-870MHz 20W 12.5V, 3 St.
The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.

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Datasheet Specifications

Part number: RA20H8087M
Manufacturer: Mitsubishi Electric Semiconductor
File Size: 77.76 KB
Datasheet: RA20H8087M_MitsubishiElectricSemiconductor.pdf
Description: 806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO

Features

* Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V)
* Pout>20W, ηT>25% @ VDD=12.5V, VGG=5V, Pin=50mW
* Broadband Frequency Range: 806-825/ 851-870MHz
* Low-Power Control Current IGG=1mA (typ) at VGG=5V
* Module Size: 66 x 21 x 9.88 mm

RA20H8087M Distributors

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RA20H8087M 806-825 851-870MHz 20W 12.5V Stage Amp. For MOBILE RADIO Mitsubishi Electric Semiconductor

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