RA08H1317M - Silicon RF Power Modules

Mitsubishi Electric Semiconductor

Datasheet Details

Part number	RA08H1317M
Manufacturer	Mitsubishi Electric Semiconductor
File Size	1.27 MB
Description	Silicon RF Power Modules
Datasheet	RA08H1317M_MitsubishiElectricSemiconductor.pdf

The RA08H1317M is a 8-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 135- to 175-MHz range.

Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V).
Pout>8W @ VDD=12.5V, VGG=3.5V, Pin=20mW.
ηT>40% @ Pout=8W (V GG control), VDD=12.5V, Pin=20mW.
Broadband Frequency Range: 135-175MHz.
Low-Power Control Current IGG=1mA (typ) at VGG=3.5V.
Module Size: 30 x 10 x 5.4 mm.
Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5.

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RA07M1317M - Silicon RF Power Modules

Published: Apr 16, 2005 |