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FA01219A GaAs FET HYBRID IC

Mitsubishi Electric Semiconductor

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Description

MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC .
FA01219A is RF Hybrid IC designed for 0. Low voltage. High gain.

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Datasheet Specifications

Part number: FA01219A
Manufacturer: Mitsubishi Electric Semiconductor
File Size: 23.87 KB
Datasheet: FA01219A_MitsubishiElectricSemiconductor.pdf
Description: GaAs FET HYBRID IC

Features

* Low voltage
* High gain
* High efficiency

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FA01219A GaAs FET HYBRID Mitsubishi Electric Semiconductor

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