A35H1516M RA35H1516M

Mitsubishi Electric Semiconductor

Description

www.DataSheet4U.com MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M 154-162MHz 40W 12.5V MOBILE R.
The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.

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Datasheet Specifications

Part number: A35H1516M
Manufacturer: Mitsubishi Electric Semiconductor
File Size: 112.99 KB
Datasheet: A35H1516M_MitsubishiElectricSemiconductor.pdf
Description: RA35H1516M

Features

* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
* Pout>40W, ηT>50% @ VDD=12.5V, VGG=5V, Pin=50mW
* Low-Power Control Current IGG=1mA (typ) at VGG=5V
* Module Size: 66 x 21 x 9.88 mm
* Linear operation is possible by setting the quiescent drai

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A35H1516M RA35H1516M Mitsubishi Electric Semiconductor

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