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2SK2973 - RF POWER MOS FET

Mitsubishi Electric Semiconductor

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Datasheet Details

Part number	2SK2973
Manufacturer	Mitsubishi Electric Semiconductor
File Size	33.56 KB
Description	RF POWER MOS FET
Datasheet	2SK2973_MitsubishiElectricSemiconductor.pdf

2SK2973 Product details

Description

2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications.

Features

High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm.
High efficiency:55% typ.
Source case type SOT-89 package (connected internally to source) 1 2 3.

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Other Datasheets by Mitsubishi Electric Semiconductor

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Published: Mar 30, 2005 |