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MT5C1009 - 128K x 8 SRAM

Features

  • Access Times: 12, 15, 20, 25, 35, 45, 55 and 70 ns.
  • Battery Backup: 2V data retention.
  • Low power standby.
  • High-performance, low-power CMOS process.
  • Single +5V (+10%) Power Supply.
  • Easy memory expansion with CE and OE options.
  • All inputs and outputs are TTL compatible.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SRAM MT5C1009 128K x 8 SRAM WITH CHIP & OUTPUT ENABLE AVAILABLE AS MILITARY SPECIFICATIONS •SMD 5962-89598 •MIL-STD-883 FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retention • Low power standby • High-performance, low-power CMOS process • Single +5V (+10%) Power Supply • Easy memory expansion with CE and OE options. • All inputs and outputs are TTL compatible OPTIONS • Timing 12ns access 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access 70ns access MARKING -12 (IT only) -15 -20 -25 -35 -45 -55* -70* • Package(s)• Ceramic DIP (400 mil) Ceramic DIP (600 mil) Ceramic LCC Ceramic LCC Ceramic Flatpack Ceramic SOJ Ceramic SOJ C CW EC ECA F DCJ SOJ No. 111 No. 112 No. 207 No. 208 No. 303 No. 501 No.
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