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3N166 P-CHANNEL MOSFET
The 3N166 is a monolithic dual enhancement mode P-Channel Mosfet
FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N166 ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted) Maximum Temperatures The hermetically sealed TO-78 package is well suited Storage Temperature ‐65°C to +200°C for high reliability and harsh environment applications. Operating Junction Temperature ‐55°C to +150°C Lead Temperature (Soldering, 10 sec.) +300°C (See Packaging Information). Maximum Power Dissipation Continuous Power Dissipation (one side) 300mW 3N166 Features: Total Derating above 25°C 4.
3N166 Datasheet
