ICE60N160B - N-Channel MOSFET

Micross Components

ICE60N160B Datasheet Preview — Preview of ICE60N160B PDF

Datasheet Details

Part number	ICE60N160B
Manufacturer	Micross Components
File Size	719.99 KB
Description	N-Channel MOSFET
Datasheet	ICE60N160B-MicrossComponentspdf

ICE60N160B Product details

Description

TO-263 G Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operating and Storage Temperature 23.8 72 690 6 50 ±20 ±30 208 -55 to +150 A TC = 25°C A TC = 25°C mJ ID = 6A A Limited by Tjmax V/ns VDS = 480V, ID = 23.8A, Tj = 125°C S

Features

r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 23.8A 650V 0.14Ω 85nC Pin.

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Published: Sep 24, 2016 |