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UM4001 - HIGH POWER PIN DIODES

Download the UM4001 datasheet PDF. This datasheet also covers the UM4000 variant, as both devices belong to the same high power pin diodes family and are provided as variant models within a single manufacturer datasheet.

Description

The UM4000 and UM4900 series

Features

  • high power PIN diodes with long carrier lifetimes and thick I-regions. They are especially suitable for use in low distortion switches and attenuators, in HF through S band frequencies. While both series are electrically equivalent, the UM4900 series have higher power ratings due to a shorter thermal path between the chip and package. High charge storage and long carrier lifetime enable high RF levels to be controlled with relatively low bias current. Similarly, peak RF voltages can be handled w.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (UM4000_MicrosemiCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Microsemi (Microchip)

Part Number Description
UM4000 HIGH POWER PIN DIODES
UM4002 HIGH POWER PIN DIODES
UM4006 HIGH POWER PIN DIODES
UM4010 HIGH POWER PIN DIODES
UM4300 SWITCHING / ATTENUATOR PIN DIODES

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.MICROSEMI.com www.MICROSEMI.com UM4000 / UM4900 HIGH POWER PIN DIODES RoHS Compliant Versions Available DESCRIPTION The UM4000 and UM4900 series features high power PIN diodes with long carrier lifetimes and thick I-regions. They are especially suitable for use in low distortion switches and attenuators, in HF through S band frequencies. While both series are electrically equivalent, the UM4900 series have higher power ratings due to a shorter thermal path between the chip and package. High charge storage and long carrier lifetime enable high RF levels to be controlled with relatively low bias current. Similarly, peak RF voltages can be handled well in excess of applied reverse bias voltage.
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