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MSC2X51SDA170J - Dual Silicon Carbide Schottky Barrier Diodes

Features

  • The following are key features of the MSC2X51SDA170J and MSC2X50SDA170J devices:.
  • No reverse recovery.
  • Low forward voltage.
  • Low leakage current.
  • Avalanche-energy rated.
  • RoHS compliant.
  • Isolated voltage to 2500 V Benefits The following are benefits of the MSC2X51SDA170J and MSC2X50SDA170J devices:.
  • Outstanding performance at high-frequency operation.
  • Direct mounting to heatsink (isolated package).
  • Low junction-to-cas.

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Other Datasheets by Microsemi (Microchip)

Part Number Description
MSC2X51SDA120J Dual Silicon Carbide Schottky Barrier Diodes
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MSC2X50SDA170J Dual Silicon Carbide Schottky Barrier Diodes

Full PDF Text Transcription

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MSC2X51/50SDA170J Dual Silicon Carbide Schottky Barrier Diodes Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X51/50SDA170J are dual 1700 V, 50 A SiC SBD devices in a SOT-227 package.
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