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MRF559 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Description

Designed primarily for wideband large signal stages in the UHF frequency range.

Features

  • Specified @ 12.5 V, 870 MHz Characteristics.
  • Output Power = .5 W.
  • Minimum Gain = 8.0 dB.
  • Efficiency 50%.
  • Cost Effective Macro X Package.
  • Electroless Tin Plated Leads for Improved Solderability Macro X.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF559 Features • Specified @ 12.5 V, 870 MHz Characteristics • Output Power = .5 W • Minimum Gain = 8.0 dB • Efficiency 50% • Cost Effective Macro X Package • Electroless Tin Plated Leads for Improved Solderability Macro X DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Tstg Total Device Dissipation @ TC = 75ºC Derate above 75ºC Storage Temperature Range Value 16 30 3.0 150 2.
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