MM018-06L - 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE

Product Overview

Microsemi

Datasheet Details

Part number	MM018-06L
Manufacturer	Microsemi
File Size	116.51 KB
Description	3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE
Datasheet	MM018-06L Datasheet
Additional preview pages of the MM018-06L datasheet.

Product details

Description

Short Circuit Reverse Current (RBSOA) @ Tj= 125° C, VCE= 0.8 x VCES Junction and Storage Temperature Range (° C) Continuous Source Current (parallel Diode) Pulse Source Current (parallel Diode) SYMBOL Imax Tj, Tstg IS ISM MM118-06 64 A -55 to +150 60 A 100 A MM118-12 66 A -55 to +150 50 A 100 A Electrical Parameters, per switch @ 25° C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) Gate Threshold Voltage SYMBOL BVCES VGE(th) CONDITIONS

Features

Available in Low Conduction Loss Class as MM118-xxL or Fast Switching Class as MM118-xxF.
Compact and rugged construction offering weight and space savings.
Available with PC board solderable pins (see mechanical outline below) or threaded terminals (add “ T”suffix to part number, see option below).
HPM (Hermetic Power Module).
Isolation voltage capability (in reference to the base) in excess of 3kV.
Very low thermal resistance.
The.

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Published: May 7, 2005 |