MG1006, MG1001 - GUNN Diodes

Name: MG1006
SKU: MG1006-1526542

Microsemi

The MG1006 by Microsemi is a GUNN Diodes. Below is the official datasheet preview.

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MG1006 GUNN Diodes by Microsemi - Datasheet Preview — Official preview page of the **MG1006** GUNN Diodes datasheet (Microsemi).

Datasheet Details

Part number	MG1006, MG1001
Manufacturer	Microsemi
File Size	205.73 KB
Description	GUNN Diodes
Datasheet	MG1001-Microsemi.pdf
Note	This datasheet PDF includes multiple part numbers: MG1006, MG1001. Please refer to the document for exact specifications by model.
Additional preview pages of the MG1006 datasheet.

MG1006 Product details

Description

Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. 95 GHz.

Features

CW Designs to 500 mW.
Pulsed Designs to 10 W.
Frequency Coverage Specified from 5.9.
95 GHz.
Low Phase Noise.
High Reliability.

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Published: Feb 12, 2024 |