2N6300 Datasheet (Microsemi) - PNP DARLINGTON POWER SILICON TRANSISTOR

2N6300, PNP DARLINGTON POWER SILICON TRANSISTOR

TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/539 Devices 2N6300 2N6301 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = 00C (1) @ TC = 1000C VCEO VCBO VEBO IB IC PT Operating & Storage Junction Temperature Range TJ, Tstg 1) Derate linearly 0.428 W/0C above TC > 00C 2N6300 2N6301 60 80 60 80 5.0 120 8.0 75