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2N3019 - LOW POWER NPN SILICON TRANSISTOR

Download the 2N3019 datasheet PDF. This datasheet also covers the 2N3700 variant, as both devices belong to the same low power npn silicon transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N3700_MicrosemiCorporation.pdf) that lists specifications for multiple related part numbers.

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TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices 2N3019 2N3019S 2N3057A 2N3700 2N3700S Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB @ TC = +250C(2) 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB Operating & Storage Jct Temp Range Symbol VCEO VCBO VEBO IC PT TJ, Tstg Value 80 140 7.0 1.0 0.8 0.4 0.5 0.4 5.0 1.8 1.8 1.16 -55 to +175 Units Vdc Vdc Vdc Adc W W 0C TO-39* (TO-205AD) 2N3019, 2N3019S TO- 18* (TO-206AA) 2N3700 TO-46* (TO-206AB) 2N3057A 1) Derate linearly 4.6 mW/0C for type 2N3019 and 2N3019S; 2.3 mW/0C for type 2N3057A; 2.85 mW/0C for type 2N3700; 6.
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