APTGT75DH60T3G Power-Module IGBT

Microsemi Corporation

APTGT75DH60T3G Description

www.DataSheet4U.com APTGT75DH60T3G Asymmetrical - Bridge Trench + Field Stop IGBT Power Module 13 14 VCES = 600V IC = 75A @ Tc = 80°C Q1 CR1 18 CR3.

APTGT75DH60T3G Features

* Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated
* Very low stray inductance - Symmetrical design
* Internal thermistor f

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Datasheet Details

Part number: APTGT75DH60T3G
Manufacturer: Microsemi ↗ Corporation
File Size: 221.09 KB
Datasheet: APTGT75DH60T3G_MicrosemiCorporation.pdf
Description: Power-Module IGBT

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Power-Module IGBT Microsemi Corporation

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