APT200GT60JRDL Resonant Mode Combi IGBT

Microsemi Corporation

Description

TYPICAL PERFORMANCE CURVES APT200GT60JRDL 600V, 200A, VCE(ON) = 2.0V Typical www.DataSheet4U.com APT200GT60JRDL Resonant Mode Combi IGBT® The Thund.

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Datasheet Specifications

Part number: APT200GT60JRDL
Manufacturer: Microsemi ↗ Corporation
File Size: 292.62 KB
Datasheet: APT200GT60JRDL_MicrosemiCorporation.pdf
Description: Resonant Mode Combi IGBT

Features

* Low Forward Voltage Drop
* Low Tail Current
* Integrated Gate Resistor Low EMI, High Reliability
* Low forward Diode Voltage (VF)
* RoHS Compliant
* Ultra soft recovery diode
* RBSOA and SCSOA Rated
* High Frequency Switching to 50KHz

Applications

* ZVS Phase Shifted Bridge
* Resonant Mode Switching
* Phase Shifted Bridge
* Welding
* Induction heating
* High Frequency SMPS ISOTOP ® C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG Parameter Collector-Emitter Voltage Gate-E

APT200GT60JRDL Distributors

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APT200GT60JRDL Resonant Mode Combi IGBT Microsemi Corporation

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