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APT100GT120JRDQ4 - Thunderbolt IGBT

Features

  • Low Forward Voltage Drop.
  • Low Tail Current.
  • Integrated Gate Resistor Low EMI, High Reliability.
  • RoHS Compliant Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation. 27 -2 T SO "UL Recognized" file # E145592.
  • RBSOA and SCSOA Rated.
  • High Frequency Switching to 50KHz.

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Full PDF Text Transcription (Reference)

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APT100GT120JRDQ4 1200V, 100A, VCE(ON) = 3.2V Typical Thunderbolt IGBT® The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. E G C E Features • Low Forward Voltage Drop • Low Tail Current • Integrated Gate Resistor Low EMI, High Reliability • RoHS Compliant Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation.