The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet4U.com
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/412 Devices 2N3846 2N3847 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation
Symbol
VCEO VCBO VEBO IC
2N3846 200 300
2N3847 300 400
Units
Vdc Vdc Vdc Adc W W 0 C Unit C/W
10 20 @ TA = +250C (1) DataSheet4U.com 4.0 PT @ TC = +1000C (2) 150 Operating & Storage Temperature Range -65 to +200 Top, Tstg
DataShee
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 26.6 mW/0C to +1750C 2) Derate linearly 2 W/0C to +1750C Symbol RθJC Max. 0.