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2N1613L, 2N1613 Datasheet - Microsemi Corporation

2N1613L NPN LOW POWER SILICON TRANSISTOR

TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/181 Devices 2N718A 2N1613 2N1613L Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) Symbol VCEO VCBO VEBO IC Value 30 75 7.0 500 0.5 0.8 1.8 3.0 -55 to +175 Max. Unit Vdc Vdc Vdc mAdc TO-18 (TO-206AA) 2N718A 2N718A 2N1613, L @ TC = +250C (2) 2N718A 2N1613, L Operating & Storag.

2N1613_MicrosemiCorporation.pdf

This datasheet PDF includes multiple part numbers: 2N1613L, 2N1613. Please refer to the document for exact specifications by model.
2N1613L Datasheet Preview Page 2

Datasheet Details

Part number:

2N1613L, 2N1613

Manufacturer:

Microsemi ↗ Corporation

File Size:

56.28 KB

Description:

Npn low power silicon transistor.

Note:

This datasheet PDF includes multiple part numbers: 2N1613L, 2N1613.
Please refer to the document for exact specifications by model.

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2N1613L 2N1613 NPN LOW POWER SILICON TRANSISTOR Microsemi Corporation

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