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PF48F4400P0VBQEF - Parallel NOR Flash Embedded Memory

Download the PF48F4400P0VBQEF datasheet PDF (PF48F4000P0ZBQEF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for parallel nor flash embedded memory.

Features

  • Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx Features.
  • High performance.
  • 100ns initial access for Easy BGA.
  • 110ns initial access for TSOP.
  • 25ns 16-word asychronous page read mode.
  • 52 MHz (Easy BGA) with zero WAIT states and 17ns clock-to-data output synchronous burst read mode.
  • 4-, 8-, 16-, and continuous wor.

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Note: The manufacturer provides a single datasheet file (PF48F4000P0ZBQEF-Micron.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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256Mb and 512Mb (256Mb/256Mb), P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx Features • High performance – 100ns initial access for Easy BGA – 110ns initial access for TSOP – 25ns 16-word asychronous page read mode – 52 MHz (Easy BGA) with zero WAIT states and 17ns clock-to-data output synchronous burst read mode – 4-, 8-, 16-, and continuous word options for burst mode – Buffered enhanced factory programming (BEFP) at 2 MB/s (TYP) using a 512-word buffer – 1.8V buffered programming at 1.
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